Uncooled infrared photon detector and multicolor infrared detection using microoptomechanical sensors
AssigneeLockheed Martin Energy Research Corporation
InventorsPanagiotis G. Datskos, Solobodan Rajic, Irene C. Datskou
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Abstract
Systems and methods for infrared detection are described. An optomechanical photon detector includes a semiconductor material and is based on measurement of a photoinduced lattice strain. A multicolor infrared sensor includes a stack of frequency specific optomechanical detectors. The stack can include one, or more, of the optomechanical photon detectors that function based on the measurement of photoinduced lattice strain. The systems and methods provide advantages in that rapid, sensitive multicolor infrared imaging can be performed without the need for a cooling subsystem.
Claims59
An apparatus, comprising:
- a first optomechanical detector, said first optomechanical detector I) absorbing a high frequency portion of a first spectral signal and II) passing a low frequency portion of said first spectral signal, said low frequency portion of said first spectral signal defining a second spectral signal;
- and
- a second detector optically coupled to said first optomechanical detector, said second detector absorbing an upper frequency portion of said second spectral signal.
A method, comprising:
- absorbing a high frequency portion of a first spectral signal with a first optomechanical detector;
- passing a low frequency portion of said first spectral signal through said first optomechanical detector, said low frequency portion defining a second spectral signal;
- and then
- absorbing an upper frequency portion of said second spectral signal with a second detector.
An optomechanical photon detector apparatus comprising a semiconductor material that deforms as a result of lattice strain resulting from photons creating electron/hole pairs throughout substantially the entire semiconductor material.
A method of detecting photons with an optomechanical photon detector, comprising the steps of:
- directing photons onto a semiconductor material of said optomechanical photon detector that deforms as a result of lattice strain resulting from photons creating electron/hole pairs throughout substantially the entire semiconductor material;
- and
- measuring a change in a physical parameter of said semiconductor material which occurs as a result of said lattice strain.
An apparatus comprising:
- a junction detector;
- and
- an optomechanical thermal detector coupled to said junction detector.
A method comprising:
- absorbing a high frequency portion of a first spectral signal with a junction detector;
- passing a low frequency portion of said first spectral signal through said junction detector, said low frequency portion defining a second spectral signal;
- and then
- absorbing an upper frequency portion of said second spectral signal with an optomechanical thermal detector.
An optomechanical photon detector for detecting photons having a given energy, comprising a semiconductor material having a band gap energy which is lower than said energy of said photons being detected.
Dependencies are inferred from the claim text.