High efficiency photovoltaic device
AssigneeUnited Solar Systems Corporation
InventorsSubhendu Guha, Chi C. Yang, Xi Xiang Xu
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Abstract
An N-I-P type photovoltaic device includes a multi-layered body of N-doped semiconductor material which has an amorphous, N doped layer in contact with the amorphous body of intrinsic semiconductor material, and a microcrystalline, N doped layer overlying the amorphous, N doped material. A tandem device comprising stacked N-I-P cells may further include a second amorphous, N doped layer interposed between the microcrystalline, N doped layer and a microcrystalline P doped layer. Photovoltaic devices thus configured manifest improved performance, particularly when configured as tandem devices.
Claims13
A tandem photovoltaic device of the type comprising:
- a first and a second N-I-P type photovoltaic cell stacked in an optical and electrical series relationship, each cell including a body of substantially intrinsic semiconductor material interposed between a body of N doped semiconductor material and a body of P doped semiconductor material;
- wherein at least one of said first and second cells includes a multi-layered N doped body comprising a first layer of amorphous, N doped semiconductor material disposed in overlying contact with the intrinsic body of said cell, and a layer of microcrystalline, N doped semiconductor material disposed upon said first layer of amorphous, N doped semiconductor material, and separated from said substantially intrinsic body thereby.
An N-I-P type photovoltaic cell of the type comprising a body of substantially intrinsic semiconductor material interposed between a body of N doped semiconductor material and a body of P doped semiconductor material wherein the body of N doped semiconductor material is a multi-layered N doped body having a first layer of amorphous, N doped semiconductor material disposed in overlying contact with the body of substantially intrinsic semiconductor material, and a layer of microcrystalline, N doped semiconductor material disposed upon said first layer of amorphous N doped semiconductor material, and separated from said substantially intrinsic body thereby.
Dependencies are inferred from the claim text.