Method of manufacturing VCSEL arrays using vapor phase epitaxy to achieve uniform device-to-device operating characteristics
AssigneeCielo Communications, Inc.
InventorsTimothy M. Cockerill, Robert P. Bryan
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Abstract
An array of infrared vertical cavity surface-emitting lasers (VCSELs) and method of manufacturing the same is disclosed which reduces device-to-device non-uniformity for VCSEL arrays manufactured using well-known vapor phase epitaxial processes. The method involves growing layers comprising a standard infrared VCSEL array using a vapor phase epitaxial process on a substrate which is mosoriented from the (100) plane in the {111}A direction by preferably between eight and twelve degrees or more.
Claims7
A method of manufacturing VCSELs for emitting radiation having a wavelength within the range of 700 to 1100 nanometers, said method using vapor phase epitaxy and comprising the following steps:
- growing a first DBR mirror on a GaAs substrate, the substrate being misoriented by at least about five degrees from a (100) plane in a {111}A direction;
- growing a first cladding layer on the first DBR mirror;
- growing an active region on the first cladding layer, the active region including at least one GaAs quantum well;
- growing a second cladding layer on the active region;
- growing a second DBR mirror on the second cladding layer;
- and
- implanting an annular isolation region in the second DBR mirror of each VCSEL.
A method of manufacturing an array of VCSELs for emitting radiation having a wavelength within the range of 700 to 1100 nanometers, said method comprising the steps of:
- growing a first DBR mirror on a GaAs substrate;
- growing a first cladding layer on the first DBR mirror;
- growing an active region on the first cladding layer, the active region comprising at least one GaAs quantum well;
- growing a second cladding layer on the active region;
- implanting an annular isolation region for each VCSEL of the array;
- wherein each of said growing steps of said method is performed using a vapor phase epitaxial process;
- and
- wherein said substrate is misoriented by about seven degrees from a (100) plane in a {111}A direction.
A method of manufacturing a plurality of VCSELs having substantially uniform operating characteristics using a vapor phase epitaxial process, the method comprising:
- growing a first DBR mirror on a substrate, the substrate being misoriented by at least about five degrees from a (100) plane in a substantially {111} direction;
- growing a first cladding layer on the first DBR mirror;
- growing an active region on the first cladding layer;
- growing a second cladding layer on the active region;
- growing a second DBR mirror on the second cladding layer;
- and
- isolating the second DBR mirror of each VCSEL with an annular isolation region,
- wherein semiconductor alloy deposited on the substrate to form the VCSEL has a substantially homogeneous composition.
Dependencies are inferred from the claim text.