Method of producing semiconductor wafers

A method for producing a semiconductor wafer comprising the steps of

• providing a monocrystal having an outer edge and an end face;
• providing an auxiliary body having a face;
• joining the monocrystal and the auxiliary body such that the end face of the monocrystal and the face of the auxiliary body are lying substantially in the same plane;
• grinding using a grinding tool the end face of the monocrystal and a part of the face of the auxiliary body, a ground face of the monocrystal, a ground portion of the face of the auxiliary body and an unground portion of the face of the auxiliary body being left after grinding, the grinding tool performing a preset feed movement during said grinding;
• cutting using a cutting tool into the monocrystal and into the auxiliary body in a cutting plane which is parallel to the ground face of the monocrystal and parallel to the ground portion of the face of the auxiliary body, a semiconductor wafer and a cut section of the auxiliary body being left after cutting, said semiconductor wafer having a thickness and said cut section having a face comprising the ground portion and the unground portion of the face of the auxiliary body and said cut section having a thickness being the distance between the said unground portion and a back of the cut section;
• separating the cut section and the semiconductor wafer from the auxiliary body;
• measuring the difference between the thickness of the cut section and the thickness of the wafer and defining said difference as actual grinding abrasion;
• comparing the actual grinding abrasion to a value defined as reference grinding abrasion, said value determining the preset feed movement of the grinding tool;
• and
• adjusting said value if necessary before producing a further wafer.