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US 5,973,383 AGranted
High temperature ZrN and HfN IR scene projector pixels
AssigneeHoneywell Inc.
InventorsBarrett E. Cole, James O. Holmen, David K. Greenlaw
Life of this patent
Estimating the term…
Abstract
A structure and method of making resistive emitting members which exhibit high resistivity while at the same time providing high temperature operation significantly above that known in the art. Specifically the use of nitrides of Group IVB transition metals from the periodic table, exclusive of titanium is described.
Claims19
A structure used for ohmic heating comprising:
- one or more resistive members comprised of a IVB group metal of the periodic table having 40 or greater electrons, and a resistance above about 50 ohms per square wherein one or more of said one or more resistive members contain nitrogen.
A pixel for use in an ohmic heating array of pixels comprising:
- resistive member comprised of a IVB group metal of the periodic table and having 40 or greater electrons, and a resistance above about 50 ohms per square wherein said resistive members include nitrogen;
- and
- current controlling means for selectively passing current through said resistive member in concert with other of the pixels in the ohmic heating array.
An array of ohmic heating elements comprising:
- a plurality of resistive members comprised of an IVB group metal of the periodic table and having 40 or greater electrons, and a resistance above about 50 ohms per square wherein said resistive members include nitrogen;
- and
- one or more current controlling means for causing at least binary control of current flow through said plurality of resistive members.
Dependencies are inferred from the claim text.