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AssigneeMitsubishi Gas Chemical Company, Inc.
InventorsYoshimi Torii, Shunji Sasabe, Masayuki Kojima, Kazuhisa Usuami, Takafumi Tokunaga, Kazusato Hara, Yoshikazu Ohira, Tsuyoshi Matsui, Hideto Gotoh, Tetsuo Aoyama, Ryuji Hasemi, Hidetoshi Ikeda, Fukusaburo Ishihara, Ryuji Sotoaka
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There is disclosed a cleaning liquid for producing a semiconductor device which comprises (A) fluorine-containing compound; (B) water-soluble or water-miscible organic solvent; and (C) inorganic acid and/or organic acid, optionally, further comprises (D) quaternary ammonium salt or (D') a specific organic carboxylic acid ammonium salt and/or an organic carboxylic acid amine salt; as well as a process for producing a semiconductor device by forming a resist pattern on a substrate equipped on the surface with an insulating film layer or a metallic electroconductive layer, forming a via hole or electric wiring by dry etching, removing the resist pattern by ashing treatment with oxygen plasma; and effecting an cleaning treatment with the above cleaning liquid. The above cleaning liquid and production process can readily remove the deposit polymer formed in the case of dry etching without impairing metallic film and insulating film.
A cleaning liquid in the form of an aqueous solution for cleaning a semiconductor device during production of a semiconductor device, which comprises
A cleaning liquid in the form of an aqueous solution for cleaning a semiconductor device during production of a semiconductor device, which comprises
A cleaning liquid in the form of an aqueous solution for cleaning a semiconductor device during production of a semiconductor device, which comprises
A cleaning liquid in the form of an aqueous solution for cleaning a semiconductor device during production of a semiconductor device, which comprises
Dependencies are inferred from the claim text.