Method of manufacturing a semiconductor device with improved control of deposition layer thickness
AssigneeAdvanced Micro Devices, Inc.
InventorChii-Chang Lee
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Abstract
The uniformity of the thickness of a deposition layer, generated by a chemical vapor deposition (CVD) process, on a semiconductor wafer is enhanced by providing an undercoating on the deposition chamber. The undercoating is formed at a deposition rate significantly faster than the deposition rate of the material on the wafer. A thin precoat is typically formed over the undercoating. Another method of providing uniformity of thickness includes altering the temperature of the wafer or a series of wafers to alter the deposition rate. The alteration of the temperature of the wafer may include the use of a temperature ramp which increases or decreases the deposition temperature between two or more wafers in a series of wafers.
Claims18
A method of making a semiconductor device, comprising:
- depositing an undercoating of a first deposition material on one or more portions of a chamber at a first deposition rate;
- placing at least one semiconductor wafer in the chamber after depositing the undercoating on the one or more portions of the chamber;
- and
- depositing a coating of a second deposition material on a surface of the wafer at a second deposition rate, wherein the first deposition rate is faster than the second deposition rate.
Dependencies are inferred from the claim text.