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AssigneeNational Institute for Advanced Interdisciplinary Research
InventorsHirotaka Ohno, Larry A. Nagahara, Hiroshi Tokumoto
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A method is provided that produces a good, strong organic monomolecular film having its atoms arranged in a three-dimensionally ordered manner by cleaving a III-V group compound semiconductor substrate in film formation molecules or in a solution containing them, in order to cause selective chemisorption which forms a monomolecular film and then deposits another layer of organic molecule film. In this method, the III-V group compound semiconductor substrate is cleaved in a solution containing SH groups dissolved into a solvent in order to form a self-assembled monolayer and is then placed in another solution, where metallic ions are adsorbed to the surface of the film or where the functional groups are converted by chemical treatment. The substrate is then immersed in a solution containing organic molecules that are selectively chemisorbed to the functional groups. This process is sequentially repeated to form good, strong multilayers having a three-dimensionally ordered arrangement while also controlling film thickness.
An organic thin film fabricating method comprising an immersion of a cleaved III-V group compound semiconductor substrate in a solution or a molten liquid containing amphipathic organic molecules with an SH group derivative at their terminal groups, to allow the amphipathic organic molecules to be adsorbed to a cleaved surface in order to form a first organic monomolecular film;
An organic thin film fabricating method comprising an immersion of a cleaved III-V group compound semiconductor substrate in a solution or a molten liquid containing amphipathic organic molecules with an SH group derivative at their terminal groups, to allow the amphipathic organic molecules to be adsorbed to a cleaved surface in order to form a first organic monomolecular film;
An organic thin film fabricating method comprising an immersion of a cleaved III-V group compound semiconductor substrate in a solution containing amphipathic organic molecules with an SH group derivative at one end and a COOCH.sub.3 group at the other end, to allow the amphipathic organic molecules to be adsorbed to a cleaved surface in order to form a first organic monomolecular film;
An organic thin film fabricating method comprising an immersion of a cleaved III-V group compound semiconductor substrate in a solution containing amphipathic organic molecules with an SH group derivative at one end and a CH.sub.2 .dbd.CH group at the other end, to allow the amphipathic organic molecules to be adsorbed to a cleaved surface in order to form a first organic monomolecular film, followed by treatment of the substrate with a B.sub.2 H.sub.6 solution dissolved in an organic solvent and with a mixed solution of sodium hydroxide and hydrogen peroxide in a pure water;
Dependencies are inferred from the claim text.