Multi-step plasma treatment process for forming low resistance titanium nitride layer

A method for forming a titanium nitride barrier layer within an integrated circuit comprising:

• providing a semiconductor substrate having semiconductor devices formed thereupon;
• forming over the substrate a virgin titanium nitride layer, the virgin titanium nitride layer being formed through a chemical vapor deposition (CVD) method employing a tetrakis-dialkylamido-titanium source material without a halogen activator source material;
• annealing the virgin titanium nitride layer in a first plasma comprising nitrogen and hydrogen to form a refined titanium nitride layer;
• annealing then the refined titanium nitride layer in a second plasma comprising nitrogen without hydrogen to form a low resistance titanium nitride layer;
• and
• forming over the low resistance titanium nitride layer an aluminum containing conductor metallization layer.

A method for forming a titanium nitride adhesion promoter layer within an integrated circuit:

• providing a semiconductor substrate having semiconductor devices formed thereupon;
• forming over the semiconductor substrate a virgin titanium nitride layer, the virgin titanium nitride layer being formed through a chemical vapor deposition (CVD) method employing a tetrakis-diallylamido titanium source material without a halogen activator source material;
• annealing the virgin titanium nitride layer in a first plasma comprising nitrogen and hydrogen to form a refined titanium nitride layer;
• annealing then the refined titanium nitride layer in a second plasma comprising nitrogen without hydrogen to form a low resistance titanium nitride layer;
• and
• forming upon the low resistance titanium nitride layer a tungsten layer.