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US 5,970,361 AGranted
Process for producing semiconductor device having porous regions
AssigneeCanon Kabushiki Kaisha
InventorsHideya Kumomi, Takao Yonehara, Nobuhiko Sato
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Abstract
Disclosed are a semiconductor device having a porous member as an active region, the porous member comprising a plurality of porous regions having different structures or compositions; and a process for producing a semiconductor device, comprising a step of modifying partially a non-porous substrate, and a subsequent step of making the substrate porous.
Claims7
A process for producing a semiconductor device comprising:
- providing a non-porous substrate;
- and
- anodizing the non-porous substrate while changing electric current density to form the semiconductor device, which includes a non-porous substrate region and a plurality of porous regions having structures different from each other;
- wherein a first porous region has a brittle structure;
- wherein a second porous region has a strong structure;
- and
- wherein the first porous region is sandwiched between the second porous region and the non-porous substrate region.
4 more elements
Dependencies are inferred from the claim text.