Semiconductor device having a thin gate oxide and method of manufacture thereof
AssigneeAdvanced Micro Devices, Inc.
InventorsMark I. Gardner, Thomas, Jr. E. Spikes, Robert Paiz
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Abstract
A process for fabricating a device having a thin gate oxide layer on which a gate electrode is formed is disclosed. The thin gate oxide layer is formed using an ion implantation process in order to reliably control the thickness of the gate oxide layer. A nitrogen-containing species is used in the ion implantation in order to form a nitrogen rich oxide layer and to increase the reliability and performance of a resultant device.
Claims20
A process of forming a semiconductor device, the process comprising:
- implanting an oxygen containing species and a nitrogen containing species into a substrate to form a nitrogen and oxygen bearing layer in the substrate;
- annealing the implanted substrate to form a nitrogen bearing gate oxide layer, from the nitrogen and oxygen bearing layer, on an outer surface of the substrate;
- and
- forming a gate electrode on the nitrogen bearing gate oxide layer.
A process for forming a semiconductor device, the process comprising:
- implanting an oxygen containing species into an outer surface of a substrate to form an oxygen bearing region at the outer surface of the substrate, wherein oxygen containing species includes nitrogen containing species
- depositing a gate electrode layer on the outer surface of the implanted substrate;
- and
- annealing the implanted substrate and the gate electrode layer in an inert atmosphere to form a gate oxide layer, from the oxygen bearing region, between the substrate and the gate electrode layer.
A process of fabricating a semiconductor device, comprising:
- implanting an oxygen containing species into an outer surface of a substrate substantially free of any covering material to form an oxygen bearing layer at the outer surface, wherein oxygen containing species includes nitrogen containing species
- annealing the implanted substrate to form a gate oxide layer, from the oxygen bearing layer, on the outer surface of the substrate;
- and
- forming a gate electrode on the gate oxide layer.
A process of fabricating a semiconductor device, comprising:
- forming a temporary layer over a surface of a substrate;
- implanting an oxygen containing species through the temporary layer into a substrate to form an oxygen bearing layer in an outer surface region of the substrate, wherein oxygen containing species includes nitrogen containing species
- annealing the implanted substrate to form a gate oxide layer, from the oxygen bearing layer, on an outer surface of the substrate;
- removing the temporary layer;
- and
- forming a gate electrode on the gate oxide layer.
Dependencies are inferred from the claim text.