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US 5,970,344 AGranted
Method of manufacturing semiconductor device having gate electrodes formed in trench structure before formation of source layers
AssigneeSanyo Electric Co., Ltd.
InventorsHirotoshi Kubo, Eiichiroh Kuwako, Masanao Kitagawa, Hiroaki Saito
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Abstract
A channel layer is formed in a surface of a semiconductor substrate, and a plurality of trenches are formed in the surface of the semiconductor substrate, the trenches being deeper than the channel layer. Then, gate electrodes are formed in the trenches, respectively, after which body layers are formed between the trenches and source layers are formed adjacent to the trenches.
Claims5
A method of manufacturing a semiconductor device, comprising:
- forming a channel layer in a surface of a semiconductor substrate;
- forming a plurality of trenches in the surface of said semiconductor substrate which are deeper than said channel layer;
- forming gate electrodes in said trenches, respectively;
- forming body layers between said trenches;
- and
- after said gate electrodes have been formed in said trenches, forming source layers adjacent to said trenches by having said source layers align with the previously-formed gate electrodes such that said source layers are superposed laterally with upper ends of said gate electrodes.
3 more elements
Dependencies are inferred from the claim text.