Methods of making dual gated power electronic switching devices
OwnerJohn Cuervo Driscollinventor
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Abstract
Methods for making semiconductor switching devices are disclosed. The switching device is designed and constructed to include, for example, a highly interdigitated cathode/gate structure on both sides of the chip. The semiconductor switching device can be four leaded which provides a great deal of flexibility in operation.
Claims11
A method for doping a semiconductor material to become a p-type doped semiconductor material comprising the steps of:
- (a) doping said semiconductor material with aluminum by diffusing said aluminum into said semiconductor material for about 16 hours at about 1275 degrees Celsius;
- (b) doping said semiconductor material with gallium;
- and
- (c) doping said semiconductor material with boron.
A method for doping a semiconductor material to become a p-type doped semiconductor material comprising the steps of:
- (a) doping said semiconductor material with aluminum;
- (b doping said semiconductor material with gallium;
- and
- (c) doping said semiconductor material with boron, wherein at least one of said doping steps is performed using a variable frequency traveling wave tube.
A method of manufacturing a semiconductor device comprising the steps of:
- (a) doping a substrate to obtain a multi-layer semiconductor structure;
- (b) providing an emitter mask over an area of an n+ layer of said semiconductor structure;
- (c) selectively etching a remaining portion of said n+ layer to expose said emitter area;
- (d) polyetching said semiconductor structure to remove remaining n material;
- and
- (e) removing said emitter mask.
A method for doping a semiconductor material to become a p-type doped material comprising the steps of:
- (a) initially doping said semiconductor material with aluminum;
- (b) next, doping said semiconductor material with gallium;
- and
- (c) then, doping said semiconductor material with boron.
A method of manufacturing a semiconductor device comprising the steps of:
- (a) doping a substrate to obtain a multi-layer semiconductor structure;
- (b) masking and etching both sides of said multi-layer semiconductor structure;
- and
- (c) providing electrical contacts to both sides of said multi-layer semiconductor structure.
Dependencies are inferred from the claim text.