Repairable semiconductor integrated circuit memory by selective assignment of groups of redundancy elements to domains

A method for repairing a memory device provided with a selective domain redundancy replacement arrangement, the method comprising the steps of:

• providing primary memory arrays, said primary memory arrays having at least two domains, each of said at least two domains including at least two sub-domains;
• providing redundancy groups, each of said groups having at least two sub-groups;
• assigning said redundancy groups to at least one of said two domains;
• assigning said redundancy sub-groups within said assigned redundancy group to at least one of said sub-domains contained within said assigned domain;
• and
• repairing faults contained within said assigned sub-domain with said redundancy units contained within said assigned redundancy sub-groups.

A method for repairing a memory device provided with a selective domain redundancy replacement arrangement, the method comprising the steps of:

• providing primary memory arrays, said primary memory arrays having at least two first domains and at least two second domains, each of said at least second domains comprising at least two sub-domains;
• assigning first redundancy groups to at least one of said two first domains, each of said first redundancy groups comprising a plurality of first redundancy units;
• repairing faults contained within said first domain with said first redundancy units contained within said assigned first redundancy groups;
• providing second redundancy groups, each of said redundancy groups having at least two redundancy sub-groups;
• assigning said redundancy sub-groups within said assigned second redundancy groups to at least one of said sub-domains in said assigned second domain;
• and
• repairing faults contained in said assigned sub-domain with said second redundancy groups, wherein said second redundancy groups comprise group control means.

A repairable memory device provided with a selective domain redundancy replacement arrangement, the memory device comprising:

• primary memory arrays, each of said primary memory arrays having at least two domains;
• means for assigning redundancy groups to at least one of said two domains, each of said redundancy groups comprising a plurality of redundancy units;
• and
• means for repairing faults within said domain with said redundancy units contained within said assigned redundancy groups.

A repairable memory device provided with a selective domain redundancy replacement arrangement, the memory device comprising:

• primary memory arrays, said primary memory arrays having at least two domains, each of said at least two domains comprising at least two sub-domains;
• a plurality of redundancy groups, each of said groups having at least two sub-groups and each of said at least two sub-groups having at least two redundancy units:
• first means for assigning said redundancy groups to at least one of said two domains;
• second means for assigning redundancy sub-groups within said assigned redundancy group to at least one of said sub-domains contained within said assigned domain;
• and
• means for repairing faults within said assigned sub-domain with redundancy units contained within said assigned redundancy sub-groups.

A repairable memory device provided with a selective domain redundancy replacement arrangement, the memory device comprising:

• primary memory arrays, said primary memory arrays having at least two first domains and at least two second domains, each of said at least two second domains comprising at least two sub-domains;
• first means for assigning first redundancy groups to at least one of said two first domains, each of said first redundancy groups comprising a plurality of first redundancy units;
• first means for repairing faults within said assigned first domain with said first redundancy units contained within said assigned first redundancy groups;
• second redundancy groups, each of said second redundancy groups having at least two redundancy sub-groups, an each of said at least two redundancy sub-groups having at least two second redundancy units;
• second means for assigning said second redundancy groups to at least one of said two second domains;
• third means for assigning said redundancy sub-groups within said assigned second redundancy groups to at least one of said sub-domains in said assigned second domain;
• and
• second means for repairing faults within said assigned sub-domain with said second redundancy units in said assigned redundancy sub-groups.