Resistor in series with bootstrap diode for monolithic gate driver device

A power circuit, comprising:

• at least one high side MOS gated transistor;
• at least one low side MOS gated transistor coupled in series with the high side MOS gated transistor operable to form a bridge circuit across high and low power terminals of a power source;
• a high side driver circuit having an output operable to change conduction characteristics of the high side MOS gated transistor;
• a series coupled diode and capacitor configured in a bootstrap arrangement with the high side and low side transistors to provide an operating voltage to the high side driver circuit;
• a low side driver circuit having an output operable to change conduction characteristics of the low side MOS gated transistor;
• a low side voltage source coupled to the low side driver circuit to provide an operating voltage thereto, the series coupled diode and capacitor being in series with the low side voltage source;
• a substrate diode coupled between the low side and high side driver circuits, a cathode of the substrate diode being connected to the junction of the diode and the capacitor;
• a stray inductance located in series with the high side and low side MOS gated transistors and inducing a current through the low side MOS gated transistor in response to conduction changes in the high side and low side MOS gated transistors;
• a first current limiting element coupled in series between the low side voltage source and the diode to reduce a component of the induced current from the stray inductance from flowing through the diode into the capacitor;
• a second current limiting element operable to be coupled in series between the low power terminal and the low side voltage source to reduce a component of the induced current from the stray inductance from flowing through the diode into the capacitor;
• and
• a third current limiting element coupled in series from the low power terminal to the substrate diode to reduce a component of the induced current from the stray inductance from flowing through the substrate diode into the capacitor.

A power circuit, comprising:

• three high side MOS gated transistors;
• three low side MOS gated transistors, each low side MOS gated transistor being coupled in series with respective ones of the high side MOS gated transistors operable to form three bridge circuits across high and low power terminals of a power source;
• three high side driver circuits each having an output operable to change conduction characteristics of respective high side MOS gated transistors;
• three pairs of series coupled diode and capacitor circuits arranged in respective bootstrap configurations with respective high side and low side transistor bridge circuits to provide respective operating voltages to the respective high side driver circuits;
• three low side driver circuits each having an output operable to change conduction characteristics of the respective low side MOS gated transistors;
• a low side voltage source coupled to the low side driver circuits to provide an operating voltage thereto, the respective series coupled diode and capacitor circuits being in series with the low side voltage source;
• stray inductances, at least one stray inductance located in series with each high side and low side MOS gated transistor bridge circuit and inducing a current through the respective low side MOS gated transistor in response to conduction changes in the respective high side and low side MOS gated transistors;
• a least one first current limiting element coupled in series between the low side voltage source and at least one diode to reduce a component of the induced current from a respective stray inductance from flowing through the diode into the respective capacitor;
• a second current limiting elements operable to be coupled in series between the low power terminal and the low side voltage source to reduce a component of the induced current from respective stray inductances from flowing through the diode into the capacitor.