Solid state image sensing device
AssigneeNEC Corporation
InventorMichihiro Morimoto
Life of this patent
Estimating the term…
Abstract
By segmenting an image sensing area into a plurality of partial areas and changing the number of stages of dummy vertical electrodes to be inserted between vertical CCD registers and horizontal CCD registers, the output gate electrode, floating diffusion layer, reset gate electrode and rest drain of each horizontal CCD register can be aligned in a line to the main body of the horizontal CCD register. It is therefore possible to avoid the reduction of the transfer efficiency at the time of transferring charges, which have reached the channel under the horizontal transfer electrode, to the channel under a dummy horizontal transfer electrode.
Claims20
A solid state image sensing device comprising:
- an image sensing area in which plural columns of pixels including vertical CCD registers are arranged in parallel;
- and
- a plurality of horizontal CCD registers having output sections and provided via a predetermined number of stages of dummy vertical CCD registers for each of a plurality of partial image sensing areas obtained by segmenting said image sensing area in a horizontal direction,
- wherein said predetermined number of stages is adjusted for each of said horizontal CCD registers to permit all of said horizontal CCD registers to be arranged in parallel to each other.
A solid state image sensing device comprising:
- an image sensing area including a plurality of partial image sensing areas obtained by segmenting said image sensing area in a horizontal direction;
- a plurality of columns of pixels including vertical CCD registers, arranged in parallel in said image sensing area;
- a plurality of horizontal CCD registers, wherein each of said partial image sensing areas has associated with it a horizontal CCD register which is coupled to one of said vertical CCD registers;
- a plurality of output gate electrodes, wherein each of said output gate electrodes is coupled to one of said horizontal CCD registers;
- a plurality of floating diffusion layers, wherein each of said floating diffusion layers is coupled to one of said output gate electrodes;
- and
- a predetermined number of stages of dummy vertical CCD registers for each of said plurality of partial image sensing areas, wherein said predetermined number of stages is adjusted for each of said horizontal CCD registers to permit all of said horizontal CCD registers to be arranged in parallel to one another.
A method for forming a solid state image sensing device, the method comprising the steps of:
- forming an image sensing area;
- segmenting said image sensing area in a horizontal direction to obtain a plurality of partial image sensing areas;
- forming a plurality of columns of pixels including vertical CCD registers, arranged in parallel in said image sensing area;
- forming a plurality of horizontal CCD registers, wherein each of said partial image sensing areas has associated with it a horizontal CCD register which is coupled to one of said vertical CCD registers;
- forming a plurality of output gate electrodes, wherein each of said output gate electrodes is coupled to one of said horizontal CCD registers;
- forming a plurality of floating diffusion layers, wherein each of said floating diffusion layers is coupled to one of said output gate electrodes;
- and
- forming a fixed number of stages of dummy vertical CCD registers for each of said plurality of partial image sensing areas, wherein said fixed number of stages is adjusted for each of said horizontal CCD registers to permit all of said horizontal CCD registers to be arranged in parallel to one another.
Dependencies are inferred from the claim text.