Waveguide oscillator having planar slotted guide structure
AssigneeDaimler-Benz Aerospace AG
InventorStefan Rust
Life of this patent
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AssigneeDaimler-Benz Aerospace AG
InventorStefan Rust
Estimating the term…
A waveguide oscillator by means of which carrier waves can be generated in a waveguide. The waveguide oscillator takes the form of a planar slotted guide structure arranged in the waveguide approximately perpendicularly to the longitudinal axis of the waveguide and has two transmitting slotted guides, at least one semiconductor oscillator element and at least one compensation slotted guide.
A waveguide oscillator for generating carrier waves in a waveguide is designed as a planar slotted guide structure which is arranged approximately perpendicular to the longitudinal axis of the waveguide in a cross-sectional surface of the waveguide, the slotted guide structure comprising:
Dependencies are inferred from the claim text.
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No related US applications are recorded in the indexed filing history.
And elements comprising distributed inductance and capacitance: the frequency being determined by a cavity resonator, e.g. a hollow waveguide…
Using solid state devices, e.g. Gunn-effect devices: and elements comprising distributed inductance and capacitance
Using solid state devices, e.g. Gunn-effect devices: using impact ionization avalanche transit time [IMPATT] diodes
Generation of oscillations, directly or by frequency-changing, by circuits employing active elements
Term ended 27 Mar 2018 (estimated)
USPTO file history isn’t available for this patent, so only indexed dates are shown.
The invention relates to a waveguide oscillator for generating carrier waves in a waveguide having at least one semiconductor oscillating element and at least one transmitting antenna element.
Known waveguide oscillators for generating carrier waves in waveguides comprise a pole inserted into the waveguide, which functions as a transmitting/antenna element, and a semiconductor oscillating element that is inserted into the waveguide. The semiconductor oscillating element is arranged on the base for the waveguide inside area, and the pole is inserted between the housing surface of the semiconductor oscillating element and the opposite arranged waveguide surface, so that it can radiate freely into the waveguide inside area while in a perpendicular position. The semiconductor oscillating elements used in known waveguide oscillators are cased Gunn diodes, impatt diodes or similar, cased semiconductor elements, which can generate a HF oscillation when direct voltage is applied. With the known waveguide oscillators, the oscillator is adapted to the characteristic wave impedance of the waveguide by means of a quarter-wave short circuit. This short circuit consists of a waveguide segment that is closed off on one side and has a length of one fourth the wavelength of the carrier wave to be radiated. The pole with the semiconductor oscillating element is arranged at its open end. As a result of the production and assembly of the precision-mechanical parts, the known waveguide oscillators are relatively expensive. The semiconductor oscillating elements in the known waveguide oscillators can be used only as cased elements since they are affected by the contact pressure exerted by the pole. However, cased diodes are also very expensive when compared to non-cased chip diodes.
It is the object of the invention to create an economical waveguide oscillator, which makes it possible to generate carrier waves in a waveguide.
Exemplary embodiments of the invention are explained in more detail with the aid of the drawing in which:
FIG. 1 shows a waveguide oscillator with a semiconductor oscillating element and slotted guides arranged around the edge;
FIG. 2 shows a waveguide oscillator with two semiconductor oscillating elements where the compensation slotted guides are arranged centrally;
FIG. 1 shows the slotted guide structure 2 of a waveguide oscillator for generating carrier waves in a waveguide, the structure being fitted onto the cross-sectional surface of a rectangular waveguide 1. The slotted guide structure 2 is formed in a metal layer on a planar dielectric substrate that is metallized on one side. Two transmitting slotted guides 4 and 5, two compensation slotted guides 6 and 7, a semiconductor oscillating element 3, two capacitive elements 14 and 15, two stubs 12 and 13 and a low-pass filter 21 are integrated into the slotted guide structure 2.
The transmitting slotted guides 4 and 5 are connected in series with open ends and are bridged at the junction by a non-cased semiconductor oscillating element 3. If a direct voltage is applied, the oscillating semiconductor element 3 used in this case generates HF energy and can be a Gunn diode, an impatt diode or a HF diode with a similar effect, depending on the type of use. The semiconductor oscillating element 3 is integrated into the slotted guide structure 2 by means of bonded connections. The semiconductor oscillating element 3 and the transmitting slotted guides 4 and 5 are arranged in the slotted guide structure 2 in such a way that the semiconductor oscillating element is located next to the base point of the maximum field intensity vector 10 of the adjoining waveguide-E-field.
The two transmitting slotted guides 4, 5, which are designed to be identical and thus have the same resonance frequency f (ind OI), are arranged in the slotted guide structure 2 in such a way that along their total length, their outside edge adjoins the border for the waveguide inside space 11. Their electrically effective length respectively is one half the wavelength of the carrier wave to be generated. At the ends which are not interconnected, the transmitting slotted guides 4, 5 respectively are nearly short-circuited with one 5 capacitive element 14, 15. The capacitive elements 14 and 15 are arranged outside of the border for the waveguide inside space 11.