Process for controlling at least one IGBT type transistor enabling its operation under irradiation
AssigneesCommissariat a l'Energie Atomique, Compagnie Generale des Matieres Nucleaires
InventorsMichel Marceau, Guillaume Cogat
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Abstract
This invention relates to a process for controlling at least one IGBT type transistor enabling its operation under irradiation, in which the value of the threshold value Vge.sub.s of the gate-emitter voltage of a first IGBT transistor (30) under irradiation is measured, and the voltage applied between the gate and the emitter of at least one second IGBT transistor under irradiation is varied during operation, so as to slave the threshold voltage Vge.sub.s of this (these) IGBT transistor(s) to a set value despite the drift caused by irradiation.
Claims6
Process for controlling at least one IGBT type transistor enabling its operation under irradiation, characterized in that the value of the threshold value Vge.sub.s of the gate-emitter voltage of a first IGBT transistor (30) under irradiation s measured, and the voltage applied between the gate and the emitter of at least one second IGBT transistor (Q1-Q6) under irradiation is varied during operation, such that the threshold voltage Vge.sub.s of the at least one second IGBT transistor is slaved to a set value despite the drift caused by irradiation.
Dependencies are inferred from the claim text.