Aluminum-containing films derived from using hydrogen and oxygen gas in sputter deposition
AssigneeMicron Technology, Inc.
InventorsKanwal K. Raina, David H. Wells
Life of this patent
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Abstract
An aluminum-containing film having an oxygen content within the film. The aluminum-containing film is formed by introducing hydrogen gas and oxygen gas along with argon gas into a sputter deposition vacuum chamber during the sputter deposition of aluminum or aluminum alloys onto a semiconductor substrate. The alumininum-containing film so formed is hillock-free and has low resistivity, relatively low roughness compared to pure aluminum, good mechanical strength, and low residual stress.
Claims5
A substantially hillock-free aluminum-containing film consisting essentially of aluminum having an oxygen content of least about 12% (atomic).
A flat panel display having at least one conductive component formed from substantially hillock-free aluminum-containing film, wherein said substantially hillock-free aluminum-contain film consists essentially of aluminum having an oxygen content of least about 12% (atomic).
Dependencies are inferred from the claim text.