US 5,969,407 A · MOSFET device with an amorphized source

Abstract

An amorphized implant is performed to retard diffusion of ions in the source and drain regions. By retarding the diffusion of ions in these regions, a shallower junction is advantageously created in the silicon regions of the wafer. A slight degradation in leakage current is obtained if the amorphized implant is performed on both the source and the drain sides of a transistor. However, since the source region is a low voltage region with a very shallow junction, MOSFETs in both n-channel and p-channel regions are formed with improved performance and reliability. A method of fabricating an integrated circuit includes forming a gate electrode over a semiconductor substrate, forming a source mask extending over the drain region of the semiconductor substrate, and implanting an implant species into the source region of the semiconductor substrate to form an amorphous implant layer of the semiconductor substrate. The semiconductor substrate has a source region adjacent to a first side of the gate electrode and has a drain region adjacent to a second side of the gate electrode. The amorphous implant layer is self-aligned with the source mask and extends through the exposed region of the semiconductor substrate and the source region of the semiconductor substrate. The method further includes the step of implanting a source implant into the exposed region of the semiconductor substrate and the source region of the semiconductor substrate to form a source implant layer of the semiconductor substrate. The source implant layer extends a shallower depth into the semiconductor substrate than the amorphous implant layer.

Claims3

Dependent claims

An integrated circuit comprising:

a semiconductor substrate;
a gate electrode over the semiconductor substrate, the gate electrode having a gate width smaller than the minimum resolution of a photolithographic system used to etch the gate electrode;
a source region in the semiconductor substrate adjacent to a first side of the gate electrode;
a drain region in the semiconductor substrate adjacent to a second side of the gate electrode;
an amorphous implant implanted into the source region of the semiconductor substrate, the amorphous implant being self-aligned with the gate electrode and asymmetrically implanted into the source region in exclusion of the drain region;
a source implant implanted into the source region of the semiconductor substrate to a depth shallower than the depth of the amorphous implant;
a drain implant implanted into the drain region of the semiconductor substrate;
and
lightly-doped drain (LDD) regions implanted into the source region and the drain region of the semiconductor substrate, the LDD regions being implanted to a depth shallower than the source implant.

6 more elements

Dependencies are inferred from the claim text.

MOSFET device with an amorphized source

Life of this patent

MOSFET device with an amorphized source

Life of this patent

Abstract

Claims3