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US 5,969,401 AGranted
Silicon on insulator substrate with improved insulation patterns
AssigneeNEC Corporation
InventorTomohiro Hamajima
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AssigneeNEC Corporation
InventorTomohiro Hamajima
Estimating the term…
The present invention provides a silicon-on-insulator substrate comprising a first silicon substrate, a second silicon substrate bonded to the first silicon substrate, a plurality of insulation film patterns formed on a plurality of first type regions of an interface between the first and second silicon substrate, so that the first and second silicon substrates on the plurality of first type regions are indirectly bonded through the plurality of insulation film patterns while the first and second silicon substrates on a plurality of second type regions are directly bonded to each other, wherein each of the plurality of first type regions is bounded on all sides by the plurality of second type regions while each of the plurality of second type regions is bounded on all sides by the plurality of first type regions.
A silicon-on-insulator substrate comprising a first silicon substrate, a second silicon substrate bonded to said first silicon substrate, a plurality of insulation film patterns formed on a plurality of first type regions of an interface between said first and second silicon substrates, so that said first and second silicon substrates on said plurality of first type regions are indirectly bonded through said plurality of insulation film patterns whilst said first and second silicon substrates on a plurality of second type regions are directly bonded to each other,
A silicon-on-insulator substrate comprising a first silicon substrate, a second silicon substrate bonded to said first silicon substrate, a plurality of insulation film patterns formed on a plurality of first type regions of an interface between said first and second silicon substrates, so that said first and second silicon substrates on said plurality of first type regions are indirectly bonded through said plurality of insulation film patterns whilst said first and second silicon substrates on a plurality of second type regions are directly bonded to each other,
A silicon-on-insulator substrate comprising a first silicon substrate, a second silicon substrate bonded to said first silicon substrate, a plurality of insulation film patterns formed on a plurality of first type regions of an interface between said first and second silicon substrates, so that said first and second silicon substrates on said plurality of first type regions are indirectly bonded through said plurality of insulation film patterns whilst said first and second silicon substrates on a plurality of second type regions are directly bonded to each other,
Dependencies are inferred from the claim text.