Method and structure for high aspect gate and short channel length insulated gate field effect transistors
AssigneeAdvanced Micro Devices, Inc.
InventorsMark I. Gardner, Daniel Kadosh
Life of this patent
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Abstract
A method and structure are provided for an IGFET which has a short conduction channel length. The short channel IGFET functions more rapidly than do longer conduction channel devices. Also the invention includes a dielectric layer with a high dielectric constant value (K) to prolong the longevity of the device. A lightly doped drain region similarly preserves the integrity of the IGFET by protecting the gate from "hot electron injection." The method and structure provide an IGFET with increased performance without compromising the IGFET's reliability or longevity.
Claims11
A device comprising:
- a dielectric layer on a surface of a semiconductor substrate;
- a gate on a surface of the dielectric layer, the gate having opposing sides, wherein a portion of the gate is greater in length than the dielectric layer, and extends past the dielectric layer underneath on one of the opposing sides;
- a source region within the substrate;
- and
- a drain region within the substrate.
An information handling system comprising:
- a central processing unit;
- a random access memory;
- and
- a system bus for communicatively coupling the central processing unit and the random access memory, said information handling system further including at least one device comprising:
- a dielectric layer on a surface of a semiconductor substrate;
- a gate on a surface of the dielectric layer, the gate having opposing sides, wherein a portion of the gate is greater in length than the dielectric layer and extends past the dielectric layer underneath on one of the opposing sides;
- a source region within the substrate;
- and
- a drain region within the substrate.
Dependencies are inferred from the claim text.