Aluminum gates including ion implanted composite layers
AssigneeSamsung Electronics Co., Ltd.
InventorMun-pyo Hong
Life of this patent
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Abstract
An aluminum gate for a thin film transistor is fabricating by implanting ions into the exposed surface of the aluminum gate. The ions are preferably selected from the group consisting of nitrogen, carbon, oxygen and boron ions. A composite layer of aluminum and the implanted ions thereby formed at the exposed surface of the aluminum layer. Gates for thin film transistors, including an aluminum layer and a composite layer of aluminum and another element at the surface thereof can suppress hillocks in the aluminum gate which may be caused by compressive stresses during subsequent fabrication steps. The composite layer can have a low resistance and can allow a direct contact with an indium tin oxide conductive layer.
Claims20
A gate for a transistor comprising:
- an aluminum layer on a substrate, the aluminum layer including an exposed surface, the aluminum layer containing therein ions adjacent the exposed surface and not containing therein the ions remote from the exposed surface.
A gate for a transistor comprising:
- an aluminum layer on a substrate;
- and
- a composite layer of aluminum and at least one other element directly on the aluminum layer.
A thin film transistor comprising:
- a thin film transistor substrate;
- an aluminum gate on the thin film transistor substrate, the aluminum gate including an exposed surface, the aluminum gate containing therein ions adjacent the exposed surface;
- a channel layer on the exposed surface, opposite the substrate;
- and
- spaced apart source and drain regions on the channel layer opposite the aluminum gate.
A thin film transistor comprising:
- a thin film transistor substrate;
- an aluminum gate on the thin film transistor substrate;
- a composite layer of aluminum and at least one other element directly on the aluminum gate;
- a channel layer on the composite layer, opposite the substrate;
- and
- spaced apart source and drain regions on the channel layer opposite the aluminum gate.
Dependencies are inferred from the claim text.