Method for processing electron beam sources

Abstract

A method of processing electron emitting devices for electron beam sources, wherein the electrons emitted from the electron beam source have an axial symmetric distribution of emitted electrons include determining a crystal axis direction of the crystal bar used as the material for the electron beam source, and cutting out chip material in such a manner that the longitudinal direction of the axis of the electron emitting device coincides with the crystal axis direction of the crystal bar. As a result, the emitted electrons becomes symmetrical to the axial direction, forming an axially symmetrical distribution, and a uniform electron irradiation on a specimen can be achieved in electron microscopes, electron beam inspection and measuring apparatus, electron lithography systems, and the like.

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