Method of electroplating a copper or copper alloy interconnect
AssigneeAdvanced Micro Devices, Inc.
InventorsTakeshi Nogami, Valery Dubin, Robin Cheung
Life of this patent
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Abstract
Copper or a copper alloy is electroplated to fill via/contact holes and/or trenches in a dielectric layer. A barrier layer is initially deposited on the dielectric layer lining the hole/trench. A thin conformal layer of copper or a copper alloy is sputter deposited on the barrier layer outside the hole/trench. Copper or a copper alloy is then electroplated on the conformal copper or copper alloy layer and filling the hole/trench. During electroplating, the barrier layer functions as a seed layer within the hole/trench while the sputter deposited conformal copper or copper alloy layer enhances the flow of electrons from the wafer edge inwardly to provide a favorable deposition rate.
Claims14
A method of manufacturing a semiconductor device, the method comprising:
- forming an opening in a dielectric layer, the opening having side surfaces and exposing an upper surface of an underlying conductive region or conductive layer forming a bottom surface of the opening;
- depositing a barrier layer on an upper surface of the dielectric layer and lining the side surfaces and bottom surface of the opening;
- sputter depositing a substantially conformal layer of copper or copper alloy on the upper surface of the dielectric layer with the barrier layer therebetween;
- and
- electroplating copper or a copper alloy on the conformal Cu or Cu alloy layer and filling the opening, the barrier layer lining the opening functioning as a seed layer for electroplating within the opening.
A method of manufacturing a semiconductor device, the method comprising:
- forming an opening in a dielectric layer, the opening having side surfaces and exposing an upper surface of an underlying conductive region or conductive layer forming a bottom surface of the opening;
- depositing a barrier layer on an upper surface of the dielectric layer and lining the side surfaces and bottom surface of the opening;
- sputter depositing a substantially conformal layer of copper or copper alloy on the upper surface of the dielectric layer with the barrier layer therebetween such that substantially no copper or copper alloy is deposited on the side surfaces of the opening;
- and
- electroplating copper or a copper alloy on the conformal Cu or Cu alloy layer and filling the opening, the barrier layer lining the opening functioning as a seed layer for electroplating within the opening.
Dependencies are inferred from the claim text.