Method for fabricating an electrode structure
AssigneeSharp Kabushiki Kaisha
InventorNobuaki Teraguchi
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Abstract
The electrode structure of the invention includes a p-type Al.sub.x Ga.sub.y In.sub.1-x-y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, x+y.ltoreq.1) semiconductor layer and an electrode layer formed on the semiconductor layer. In the electrode structure, the electrode layer contains a mixture of a metal nitride and a metal hydride.
Claims14
A method for fabricating an electrode structure comprising a step of forming an electrode layer on a p-type Al.sub.x Ga.sub.y In.sub.1-x-y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, x+y,.ltoreq.1) semiconductor layer,
- wherein the electrode layer is formed by depositing a nitride forming metal and a hydrogen absorbing metal on the semiconductor layer.
A method for fabricating an electrode structure comprising a step of forming an electrode layer on a p-type Al.sub.x Ga.sub.y In.sub.1-x-y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, x+y.ltoreq.1) semiconductor layer,
- wherein the electrode layer is formed by simultaneously depositing a nitride forming metal and a hydrogen absorbing metal on the semiconductor layer.
A method for fabricating an electrode structure comprising a step of forming an electrode layer on a p-type Al.sub.x Ga.sub.y In.sub.1-x-y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, x+y.ltoreq.1) semiconductor layer,
- wherein the electrode layer is formed by depositing an intermetallic compound containing a nitride forming metal and a hydrogen absorbing metal on the semiconductor layer.
Dependencies are inferred from the claim text.