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US 5,966,627 AGranted
In-situ doped silicon layers
AssigneeLucent Technologies Inc.
InventorsDavid C. Brady, Yaw Samuel Obeng
Life of this patent
Estimating the term…
Abstract
A method and apparatus for the manufacture of integrated circuits including the placement of a single tube for introduction of dopant gases into a process chamber is disclosed.
Claims5
A method of integrated circuit fabrication comprising:
- providing a chamber having an opening and no more than one tube extending into the chamber, each for delivery of a dopant gas and the opening separate from the tube;
- and
- placing at least one wafer in the chamber.
A method of integrated circuit manufacture comprising:
- providing a chamber including:
- a chamber wall having an opening, and
- a tube extending through the chamber wall into the chamber, the opening being separate from the tube;
- placing at least one wafer in the chamber;
- and
- delivering a dopant into the chamber via the opening and the tube.
3 more elements
Dependencies are inferred from the claim text.