Method for stabilizing a silicon structure after ion implantation
AssigneeMosel Vitelic, Inc.
InventorsYung-Tsun Lo, Cheng-Hsun Tsai, Wen-Yu Ho, Jung-Chun Hsieh
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Abstract
The present invention provides a method for stabilizing the crystal structure of a silicon substrate after an ion implantation process including the step of exposing the substrate to a temperature not higher than 200.degree. C. for a time period of not less than 10 seconds, and preferably to a temperature between about 100.degree. C. and about 200.degree. C. for a time period of between about 10 seconds and about 10,000 seconds.
Claims8
A method of implanting at least one impurity ion into a silicon structure comprising the steps of:
- providing a silicon substrate,
- implanting said substrate with at least one ion selected from the group consisting of antimony, arsenic, beryllium, boron, gallium, germanium, phosphorus and silicon, and
- exposing said implanted substrate to a temperature of between about 150.degree. C. and about 200.degree. C. for a time period of not less than 10 seconds so as to stabalize the crystal structure of the silicon substrate after implantation.
A method of implanting at least one impurity ion into a silicon structure comprising the steps of:
- providing a silicon substrate,
- implanting said substrate with at least one ion selected from the group consisting of antimony, arsenic, beryllium, boron, gallium, germanium, phosphorus and silicon, at a dosage between about 1E10/cm.sup.2, and about 1E14/cm.sup.2, and
- exposing said implanted substrate to a temperature of between about 150.degree. C. and about 200.degree. C. for a time period of not less than 10 seconds so as to stabilize the crystal structure of the silicon substrate after implantation.
Dependencies are inferred from the claim text.