Method of manufacturing a semiconductor structure having a crystalline layer

A method of manufacturing a semiconductor device, comprising the steps of:

• providing a semiconductor substrate
• forming a first dielectric layer containing silicon on the semiconductor substrate;
• forming a surface layer of silicon from the first dielectric layer;
• contacting the surface layer of silicon with a nitrogen containing gas to form a layer of silicon nitride;
• annealing the layer of silicon nitride to form a crystalline layer on the first dielectric layer;
• and
• forming a second dielectric layer on the crystalline layer.

A method of manufacturing a semiconductor device, comprising the steps of:

• providing a semiconductor substrate
• forming a first dielectric layer of silicon dioxide on the semiconductor substrate;
• exposing the first dielectric layer to hydrogen gas to form a surface layer of pure silicon;
• reacting the surface layer of silicon with ammonia at elevated temperature to form a crystalline layer of silicon nitride on the first dielectric layer;
• and
• forming a second dielectric layer consisting of silicon nitride on the crystalline layer.