Process for forming a semiconductor device having a conductive member that protects field isolation during etching

A process for forming a semiconductor device comprising the steps of:

• forming a field isolation region on a semiconductor device substrate, wherein;
• the field isolation region lies between a first active region and a second active region;
• and
• the field isolation region includes a first portion and a second portion;
• forming a first dielectric layer over and directly contacting the semiconductor device substrate;
• forming a first conductive member over the first portion of the field isolation region;
• removing the first dielectric layer and a part of the second portion of the field isolation region, wherein the first conductive member overlies the first portion of the field isolation region and substantially none of the first portion is removed during this step;
• forming a second dielectric layer over and directly contacting the first and second active regions and a portion of the first conductive member;
• forming a second conductive member over and dirctly contacting the second dielectric layer over the portion of the first conductive member;
• and
• forming a first electrical connection that is electrically connected to the first conductive member, wherein the first electrical connection is made to the second conductive member or a voltage reference terminal.