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US 5,966,594 AGranted
Semiconductor device and method for manufacturing the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHiroki Adachi, Akira Takenouchi, Takeshi Fukada, Hiroshi Uehara, Yasuhiko Takemura
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Abstract
A method for manufacturing a semiconductor device comprises the steps of forming a semiconductor film on a substrate, oxidizing a surface of said semiconductor film in an oxidizing atmosphere with said semiconductor film heated or irradiated with light, and further depositing an oxide film on the oxidized surface of the semiconductor film by PVD or CVD. The first oxide film has a good interface condition with the semiconductor film and a characteristics of an insulated gate field effect transistor can be improved if the first oxide film and the second oxide film are used as a gate insulating film.
Claims92
A method for manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film comprising silicon over a substrate having an insulating surface;
- forming an insulating film comprising silicon oxide by plasma CVD;
- annealing said insulating film by irradiation of first light in an atmosphere containing oxygen and nitrogen;
- forming a gate electrode adjacent to said semiconductor film with said insulating film interposed therebetween;
- introducing ions of dopant impurity into said semiconductor film with said gate electrode used as a mask;
- and
- annealing said semiconductor film in order to activate said dopant impurity by lamp annealing,
- wherein said lamp annealing is performed with an irradiation of second light having a wavelength of 0.5 .mu.m to 4 .mu.m.
5 more elements
A method of manufacturing a semiconductor device comprising:
- forming a semiconductor film comprising silicon over a substrate;
- oxidizing a surface of said semiconductor film in an oxidizing gas containing chlorine by irradiating said semiconductor film with light;
- forming an insulating film comprising silicon oxide adjacent to said semiconductor film said insulating film being formed by plasma CVD;
- annealing at least said insulating film by irradiation of a visible light after forming said insulating film;
- and
- forming a gate electrode adjacent to said semiconductor film with said insulating film interposed therebetween.
3 more elements
A method of manufacturing a semiconductor device comprising:
- forming a semiconductor film comprising silicon over a substrate;
- forming an insulating film comprising silicon oxide adjacent to said semiconductor film, said insulating film being formed by plasma CVD;
- annealing at least said insulating film by irradiation of a visible light after forming said insulating film;
- and
- forming a gate electrode adjacent to said semiconductor film with said gate insulating film interposed therebetween,
- wherein said annealing is performed in an atmosphere containing oxygen and nitrogen.
3 more elements
A method of manufacturing a semiconductor device comprising:
- forming a semiconductor film comprises silicon over a substrate;
- oxidizing a surface of said semiconductor film in an oxidizing gas containing chlorine by irradiating said semiconductor film with light;
- forming an insulating film comprising silicon oxide adjacent to said semiconductor film, said insulating film being formed by plasma CVD;
- annealing at least said insulating film by irradiation of an infrared light after forming said insulating film and
- forming a gate electrode adjacent to said semiconductor film with said insulating film interposed therebetween.
2 more elements
A method of manufacturing a semiconductor device comprising:
- forming a semiconductor film comprising silicon over a substrate;
- forming an insulating film comprising silicon oxide adjacent to said semiconductor film, said insulating film being formed by plasma CVD;
- annealing at least said insulating film by irradiation of an infrared light after forming said insulating film;
- and
- forming a gate electrode adjacent to said semiconductor film with said insulating film interposed therebetween,
- wherein said annealing is performed in an atmosphere containing oxygen and nitrogen.
3 more elements
A method of manufacturing a semiconductor device comprising:
- forming a semiconductor film comprising silicon over a substrate;
- providing said semiconductor film with a material for promoting a crystallization of said semiconductor film;
- crystallizing said semiconductor film by heating with an aid of said material;
- oxidizing a surface of the crystallized semiconductor film in an oxidizing gas containing chlorine by irradiating the crystallized semiconductor film with an infrared light.
1 more element
A method for manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film comprising silicon over a substrate having an insulating surface;
- forming a film comprising a material on at least a portion of said semiconductor film wherein said material promotes crystallization of said semiconductor film;
- heating said semiconductor film with said material in order to crystallize said semiconductor film;
- patterning said semiconductor film after said heating step;
- irradiating a visible or a near infrared light to said semiconductor film in an oxidizing atmosphere after said patterning step;
- forming an insulating film comprising silicon oxide adjacent to said semiconductor film by CVD;
- annealing said insulating film by irradiation of light in an atmosphere containing oxygen and nitrogen;
- forming a gate electrode adjacent to said semiconductor film with said insulating film interposed therebetween;
- doping one conductivity type impurity ions to said semiconductor film;
- and
- irradiating a near infrared light to said semiconductor film after said doping step.
8 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film comprising silicon over a substrate having an insulating surface;
- forming a film comprising a material in contact with at least a portion of said semiconductor film, wherein said material promotes crystallization of said semiconductor film;
- crystallizing said semiconductor film by irradiating a laser light after forming said film comprising said material;
- forming an oxide film on a surface of the semiconductor film by heating after irradiating said laser light;
- forming an insulating film comprising a silicon oxide film adjacent to said semiconductor film by plasma CVD;
- annealing said insulating film by irradiation of light in an atmosphere containing oxygen and nitrogen;
- forming a gate electrode adjacent to said semiconductor film with said insulating film interposed therebetween;
- doping one conductivity type impurity ions into said semiconductor film;
- and
- irradiating a laser light to said semiconductor film after said doping.
7 more elements
A method for manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film comprising silicon over a substrate having an insulating surface;
- forming a film comprising a material in contact with at least a portion of said semiconductor film, wherein said material promotes crystallization of said semiconductor film;
- crystallizing said semiconductor film by heating with said film comprising said material;
- patterning said crystallized semiconductor film in order to form at least one semiconductor island;
- irradiating an infrared light to said semiconductor island in order to form an oxide film, said infrared light heating said crystallized semiconductor film selectively;
- forming an insulating film comprising silicon oxide adjacent to said semiconductor island by CVD;
- annealing said insulating film by irradiation of light in a atmosphere containing oxygen and nitrogen;
- forming a gate electrode adjacent to said semiconductor island with said insulating film interposed therebetween;
- doping one conductivity type impurity ions into said semiconductor island;
- and
- lamp annealing said semiconductor island after said doping.
8 more elements
A method for manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film comprising silicon over a substrate having an insulating surface;
- oxidizing a surface of said semiconductor film in an oxidizing gas containing chlorine by irradiating said semiconductor film with first light;
- forming an insulating film comprising silicon oxide by CVD;
- forming a gate electrode adjacent to said semiconductor film with said insulating film interposed therebetween;
- introducing ions of dopant impurity into said semiconductor film with said gate electrode used as a mask;
- and
- annealing said semiconductor film in order to activate said dopant impurity by lamp annealing,
- wherein said lamp annealing is performed with an irradiation of second light.
5 more elements
A method of manufacturing a semiconductor device comprising:
- forming a semiconductor film comprising silicon over a substrate;
- providing said semiconductor film with a material for promoting a crystallization of said semiconductor film;
- crystallizing said semiconductor film by heating with an aid of said material;
- oxidizing a surface of said crystallized semiconductor film in an oxidizing gas by irradiating the crystallized semiconductor film with first light;
- forming an insulating film comprising silicon oxide adjacent to said crystallized semiconductor film;
- and
- annealing said insulating film by irradiation of second light in an atmosphere containing oxygen and nitrogen.
4 more elements
A method for manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film comprising silicon over a substrate having an insulating surface;
- forming a film comprising a material in contact with at least a portion of said semiconductor film, wherein said material promotes crystallization of said semiconductor film;
- heating said semiconductor film with said material in order to crystallize said semiconductor film;
- patterning said semiconductor film after said heating step;
- oxidizing a surface of said semiconductor film in an oxidizing gas containing chlorine by irradiating said semiconductor film with first light after said patterning step;
- forming an insulating film comprising silicon oxide adjacent to said semiconductor film by CVD;
- forming a gate electrode adjacent to said semiconductor film with said insulating film interposed therebetween;
- doping one conductivity type impurity ions into said semiconductor film;
- and
- irradiating second light to said semiconductor film after said doping step.
7 more elements
A method for manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film comprising silicon over a substrate having an insulating surface;
- forming a film comprising a material in contact with at least a portion of said semiconductor film, wherein said material promotes crystallization of said semiconductor film;
- crystallizing said semiconductor film by irradiating a laser light after forming said film comprising said material;
- forming an oxide film on a surface of said semiconductor film in an oxidizing gas containing chlorine by irradiating said semiconductor film with light after said crystallizing step;
- forming an insulating film comprising a silicon oxide film adjacent to said semiconductor film by CVD;
- forming a gate electrode adjacent to said semiconductor film with said insulating film interposed therebetween;
- doping one conductivity type impurity ions into said semiconductor film;
- and
- irradiating a laser light to said semiconductor film after said doping.
6 more elements
A method for manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film comprising silicon over a substrate having an insulating surface;
- forming a film comprising a material in contact with at least a portion of said semiconductor film, wherein said material promotes crystallization of said semiconductor film;
- crystallizing said semiconductor film by heating with said film comprising said material;
- patterning said crystallized semiconductor film in order to form at least one semiconductor island;
- oxidizing a surface of said crystallized semiconductor film in an oxidizing gas containing chlorine by irradiating said crystallized semiconductor film with light, said light heating said crystallized semiconductor film selectively;
- forming an insulating film comprising a silicon oxide film adjacent to said semiconductor island by CVD;
- forming a gate electrode adjacent to said semiconductor island with said insulating film interposed therebetween;
- doping one conductivity type impurity ions into said semiconductor island;
- and
- lamp annealing said semiconductor island after said doping.
7 more elements
Dependencies are inferred from the claim text.