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US 5,966,588 AGranted
Field emission display device fabrication method
AssigneeKorea Institute of Science and Technology
InventorsByeong Kwon Ju, Myung Hwan Oh, Yun Hi Lee, Nam Yang Lee
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Abstract
An improved field emission display device fabrication method which adopts both a silicon wafer direct bonding method and a mold method so as to fabricate an improved field emission display device, which includes the steps of a first step which forms a tip array by a molding method; and a second step which bonds the tip array to a second semiconductor substrate.
Claims22
A field emission display device fabrication method, comprising the steps of:
- (1) forming a tip by a molding method, the molding method comprising the steps of
- (2) forming a mold by an etching process after forming an etching mask on a first semiconductor;
- (3) forming an insulation film on a surface of said first semiconductor substrate on which said mold is formed;
- (4) forming a tip on said insulation film on which the mold is formed using moisture etching, dry etching, or a mechanical lapping and polishing method;
- (5) bonding said tip to a second silicon semiconductor substrate, the bonding method comprising the step of:
- (6) hydrophilizing a surface to be bonded in a chemical treatment after washing said surface;
- (7) performing a first bonding in a hydroconjunction method after contacting two surfaces of substrates at room temperature;
- and
- (8) annealing two substrates at 800 to 1200.degree. C.
6 more elements
A field emission display device fabricating method, comprising the steps of:
- (19) forming a mold by etching a first semiconductor substrate;
- (20) forming a silicon nitride film on a substrate on said mold;
- (21) depositing an insulation film on the substrate but not on said silicon nitride film by a thermal oxide process;
- (22) forming a tip on the silicon nitride film within the mold;
- (23) removing said first semiconductor substrate after bonding a second silicon semiconductor substrate to surfaces on the insulation film and the tip;
- and
- (24) etching to expose an end portion of the tip after depositing a gate electrode metal.
4 more elements
Dependencies are inferred from the claim text.