Semiconductor memory device having circuit for changing electrical characteristics
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorRieko Nozaki
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Abstract
In a semiconductor memory device, a characteristic changing circuit is connected with a signal line for transmitting an output control signal. If a fuse is normally blown, a fuse is blown together with a fuse for redundant replacement, and otherwise both fuses are not blown. If the fuse blowing is defective, the potential of a signal line is brought to a ground potential level based on a wafer test control signal. As a result, the output control signal is fixed at an L level, and the potential of a data input/output terminal is brought to a high impedance state.
Claims15
A semiconductor memory device comprising:
- a circuit having a first fuse to be blown to perform a predetermined function,
- an external connection terminal;
- a first signal line for transmitting a signal received from said external connection terminal or transmitting a signal to said external connection terminal;
- and
- means for changing an electrical characteristic of said first signal line based on the normality/abnormality of the blowing of said first fuse.
A semiconductor memory device comprising:
- a circuit having a first fuse to be blown to perform a predetermined function,
- output control signal generation means for generating an output control signal to externally output a signal read out from a memory array;
- a first signal line for transmitting said output control signal;
- and
- means for changing an electrical characteristic of said first signal line based on the normality/abnormality of the blowing of said first fuse.
Dependencies are inferred from the claim text.