Nondestructive readout memory utilizing ferroelectric capacitors isolated from bitlines by buffer amplifiers

A nondestructive readout memory, comprising

• a bitline data signal input;
• at least one memory unit, each memory unit having a data state and comprising
• a ferroelectric capacitor with a polarization state corresponding to the memory data state, wherein the ferroelectric capacitor comprises an insulator formed of a ferroelectric material characterized by a zero field capacitance which is controllably dependent upon the electrical charging path by which the zero field capacitance is reached, and
• a buffer amplifier in electrical series relationship with the ferroelectric capacitor and the bitline data signal input;
• means for writing a polarization state into each ferroelectric capacitor responsive to the bitline data signal input;
• and
• means for sensing the polarization state of each ferroelectric capacitor.