Semiconductor memory device having storage capacity of 2.sup.2N+1 bits
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorYasuhiko Tsukikawa
Life of this patent
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Abstract
A main surface of a semiconductor substrate having the aspect ratio of 1:2 is equally divided into 9 regions of 3 rows and 3 columns, and a 2.sup.N-2 -bit subarray portion having the aspect ratio of 1:2 is arranged in each region other than a central region. The central region is provided with control circuitry and pads. Thus, a DRAM chip having the aspect ratio of 1:2 and the storage capacity of 2.sup.2N+1 bits can be formed. The DRAM chip can be contained at a high effective ratio in a package having the aspect ratio of 1:2 as is conventional.
Claims6
A semiconductor memory device having a storage capacity of 2.sup.2N+1 bits, comprising:
- a rectangular semiconductor substrate having a main surface equally divided into 9 regions of 3 rows and 3 columns;
- and
- a memory array having a storage capacity of 2.sup.2N-2 bits and an aspect ratio of 1:2 and formed in each region of said 9 regions of said semiconductor substrate other than a central region.
Dependencies are inferred from the claim text.