Magnetoresistive thin film head
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsHidetoshi Matsumoto, Hiroshi Tomiyasu
Life of this patent
Estimating the term…
Abstract
In a magnetoresistive thin film head including a magnetoresistive element, lead layers for supplying a sense current to the magnetoresistive element and an insulating layer provided in the vicinity of the magnetoresistive element, the insulating layer is formed of a material which has an electrical resistivity greater than 1.times.10.sup.4 .OMEGA.cm and a thermal conductivity greater than 100 W/(mK). The insulating layer may be formed of silicon, diamond-like carbon or the like so as to have an electrical resistivity and a thermal conductivity within the ranges defined above.
Claims9
A magnetoresistive thin film head comprising:
- a substrate;
- a first shield layer;
- a first insulating layer disposed on said first shield layer, said first shield layer disposed between said substrate and said first insulating;
- a magnetoresistive element film disposed on said first insulating layer;
- lead layers disposed on said first insulating layer for supplying a sense current to said magnetoresistive element film;
- a second insulating layer disposed on said first insulating layer so as to cover said magnetoresistive element film;
- and
- a second shield layer disposed on said second insulating layer,
- wherein each of said first and second insulating layer is formed of a material which has an electrical resistivity greater than 1.times.10.sup.4 .OMEGA.cm and a thermal conductivity greater than 100 W/(mK).
Dependencies are inferred from the claim text.