Field emission cold cathode with buried insulator layer
AssigneeNEC Corporation
InventorsNaruaki Takada, Yoshino Tomihari, Tadahiro Matsuzaki
Life of this patent
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Abstract
A field emission cold cathode comprises an n-type silicon substrate (1), a plurality of sharp-pointed emitter cones (2) formed on the n-type silicon substrate (1), and a buried insulator layer (3) formed in the n-type silicon substrate (1) to surround each of underlying regions right under each emitter cone (2). An insulator layer (4) is formed on the n-type silicon substrate (1) and has a plurality of insulator holes so as to surround each emitter cone (2). A gate electrode (5) is formed on the insulator layer (4) and has a plurality of gate holes for extracting electrons from the emitter cones (2).
Claims20
A field emission cold cathode comprising a semiconductor substrate, a plurality of sharp-pointed emitter cones formed on said semiconductor substrate at a predetermined interval to form an emitter array, and a gate electrode formed above said semiconductor substrate and having a plurality of gate holes for extracting electrons emitted from said emitter cones, wherein:
- said semiconductor substrate has a plurality of grooves each of which surrounds an underlying region right under each of said emitter cones;
- each of said grooves being filled with an insulator to form a buried insulator layer surrounding each of said underlying regions.
A field emission cold cathode comprising a semiconductor substrate, a plurality of sharp-pointed emitter cones formed on said semiconductor substrate at a predetermined interval to form an emitter array, and a gate electrode formed above said semiconductor substrate and having a plurality of gate holes for extracting electrons emitted from said emitter cones, wherein:
- said emitter cones are divided into a plurality of emitter cone groups each of which comprises a predetermined number of ones of said emitter cones;
- said semiconductor substrate having a plurality of grooves each of which surrounds an underlying region right under each emitter cone group;
- said grooves being filled with an insulator to form a buried insulator layer surrounding each of said underlying regions.
Dependencies are inferred from the claim text.