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US 5,965,943 AGranted
Semiconductor device with bonding pad electrode
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorMasaharu Mizuta
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Abstract
A semiconductor device is provided to ensure electrical connection with a probe needle and also provide ready maintenance of the probe needle. The semiconductor device includes a silicon substrate, a bonding pad electrode layer formed on the silicon substrate, and a rhenium layer formed on the bonding pad electrode layer.
Claims2
A semiconductor device with a bonding pad electrode contacting a probe needle of tungsten for electrical conduction, comprising:
- a semiconductor substrate;
- a tungsten or aluminum bonding pad electrode layer formed on said semiconductor substrate;
- and
- a rhenium layer formed on said bonding pad electrode layer.
1 more element
A semiconductor device with a bonding pad electrode contacting a probe needle of tungsten for electrical condition, comprising:
- a semiconductor substrate;
- a bonding pad electrode layer formed on said semiconductor substrate;
- a rhenium layer formed on said bonding pad electrode layer;
- and
- a barrier metal layer formed between said bonding pad electrode layer and said rhenium layer.
2 more elements
Dependencies are inferred from the claim text.