Semiconductor memory device with amorphous diffusion barrier between capacitor and plug
AssigneeSharp Kabushiki Kaisha
InventorsYasuyuki Itoh, Shigeo Onishi, Jun Kudo, Keizo Sakiyama
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Abstract
In a semiconductor memory device, a tantalum silicon nitride film or hafnium silicon nitride film is provided, as a diffusion barrier layer, between a polysilicon plug which electrically connects a source/drain region to a lower platinum electrode of a capacitor, formed on a silicon substrate, and the lower platinum electrode. The tantalum silicon nitride film has a composition of Ta.sub.X Si.sub.1-X N.sub.Y wherein 0.75 .ltoreq.X.ltoreq.0.95 and 1.0 .ltoreq.Y.ltoreq.1.1. The hafnium silicon nitride film has a composition of Hf.sub.X Si.sub.1-X N.sub.Y wherein 0.2<X<1.0 and 0<Y<1.0.
Claims2
A semiconductor memory device comprising:
- a capacitor having a lower electrode formed of platinum;
- a transistor;
- a conductive plug connecting the transistor with the lower electrode;
- and
- a diffusion barrier layer interposed between the lower electrode and the conductive plug, said diffusion barrier layer being conductive and amorphous in structure, the diffusion barrier layer being composed of a hafnium silicon nitride film having a composition of Hf.sub.X Si.sub.1-X N.sub.Y wherein 0.2<X<1 and 0<Y.ltoreq.1.
A semiconductor memory device comprising:
- a capacitor having a lower electrode, an upper electrode, and a ferroelectric or high-dielectric film formed between the foregoing electrodes;
- a transistor;
- a conductive plug connecting the transistor with the lower electrode;
- and
- a diffusion barrier layer interposed between the lower electrode and the conductive plug, said diffusion barrier layer being conductive and amorphous in structure, the diffusion barrier layer being composed of a hafnium silicon nitride film having a composition of Hf.sub.X Si.sub.1-X N.sub.Y wherein 0.2<X<1 and 0<Y.ltoreq.1.
Dependencies are inferred from the claim text.