Contamination free source for shallow low energy junction implants using implanted molecules containing titanium and boron
AssigneeMicron Technology, Inc.
InventorsGurtej S. Sandhu, Mohammed Anjum
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Abstract
A method for forming a P-type region in a semiconducting crystalline substrate by ion implantation is disclosed, wherein the implant species is an ionic molecule that contains titanium and boron.
Claims10
A P-type implant comprising a substrate having an annealed implant of a species of molecule containing titanium and boron.
A titanium silicide layer comprising a silicon substrate having an annealed implant of a species of molecule containing titanium and boron.
An integrated circuit comprising a substrate and a P-type region in the substrate having an annealed implant of a species of molecule containing titanium and boron.
An integrated circuit comprising a silicon surface and a titanium silicide layer at the silicon surface having an annealed implant of a species of molecule containing titanium and boron.
Dependencies are inferred from the claim text.