Bipolar Silicon transistor with arsenic and phosphorous ratio
AssigneeSiemens Aktiengesellschaft
InventorsKlaus Gnannt, Jakob Huber
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Abstract
A bipolar silicon transistor includes at least one emitter zone with n.sup.+ arsenic doping and with a phosphorus doping. The ratio between arsenic dopant concentration and phosphorus dopant concentration is between 10:1 and 500:1 in the at least one emitter zone. The at least one emitter zone may also have a penetration depth of less than 0.5 .mu.m. A method for producing a bipolar silicon transistor includes implanting a n.sup.+ -doped emitter zone with arsenic, implanting the n.sup.+ -doped emitter zone with phosphorus, setting a ratio in the n.sup.+ -doped emitter zone between the arsenic dopant concentration and phosphorus dopant concentration to between 10:1 and 500:1, and annealing crystal defects.
Claims6
A bipolar silicon transistor, comprising:
- an emitter zone with an n.sup.+ arsenic dopant concentration and with a phosphorus dopant concentration;
- said emitter zone having a ratio of said arsenic dopant concentration to said phosphorus dopant concentration of between 10:1 and 500:1;
- said emitter zone having a surface;
- said emitter zone having an outer periphery adjacently below said surface;
- said arsenic dopant concentration greater than said phosphorous dopant concentration within said outer periphery of said emitter zone.
A bipolar silicon transistor, comprising:
- an emitter zone including a single section having an n.sup.+ arsenic dopant concentration and having a phosphorus dopant concentration;
- and
- said single section of said emitter zone having a ratio of said arsenic dopant concentration to said phosphorus dopant concentration of between 10:1 and 500:1.
Dependencies are inferred from the claim text.