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US 5,965,926 AGranted
Circuit structure having at least one MOS transistor and method for its production
AssigneeSiemens Aktiengesellschaft
InventorUdo Schwalke
Life of this patent
Estimating the term…
Abstract
A circuit structure having at least one MOS transistor whose source/drain regions are doped by a first conductivity type and whose gate electrode is doped by a conductivity type which is opposite to the first. The gate electrode has a lower dopant concentration at at least one of its edges than in its center. In the ON state, the gate electrode is driven to accumulation, with the result being that no gate depletion occurs. Such a circuit structure is also suitable for CMOS circuits containing PMOS transistors having an n-doped gate.
Claims4
A circuit structure having an MOS transistor, comprising:
- a semiconductor substrate;
- two source/drain regions in said semiconductor substrate which are doped with a first conductivity type;
- a channel region arranged between said source/drain regions;
- a gate dielectric arranged on a surface of said channel region;
- and
- a gate electrode arranged on said gate dielectric over said surface of said channel region, said gate electrode being comprised of silicon which is doped with a second conductivity type opposite to said first conductivity type, said gate electrode having a first dopant concentration at at least one edge of said gate electrode which is lower than a second dopant concentration at a center area of said gate electrode.
3 more elements
Dependencies are inferred from the claim text.