Semiconductor device comprising silicon semiconductor layer
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHisashi Ohtani, Akiharu Miyanaga, Yasuhiko Takemura
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Abstract
The principle portion of a semiconductor device is made from a polycrystalline silicon semiconductor layer which yields an X ray diffraction pattern or an electron beam pattern with the (311) diffraction peak intensity accounting for 15% or more of the total diffraction peak intensity. A semiconductor device improved in performance and reliability can be obtained by reducing the density of states at the boundary between the polycrystalline silicon film and the gate insulating film.
Claims23
A semiconductor device comprising a polycrystalline silicon semiconductor layer which yields a diffraction pattern with the (311) diffraction peak intensity accounting for 15% or more of the total intensity of all diffraction peaks.
A semiconductor device comprising a polycrystalline silicon semiconductor layer which yields a diffraction pattern with the (311) diffraction peak intensity accounting for 40% or more of the (111) diffraction peak intensity.
A semiconductor device comprising a polycrystalline silicon semiconductor layer which yields a diffraction pattern with the (311) diffraction peak intensity accounting for 25% or more of the total intensity of the (111) diffraction peak and the (220) diffraction peak.
A semiconductor device comprising:
- a silicon semiconductor layer which yields a diffraction pattern with the (311) diffraction peak intensity accounting for 15% or more of the total intensity of all diffraction peaks;
- and
- a gate insulating film provided on a surface of said silicon semiconductor layer,
- wherein a carrier flows through a (311) plane located along said gate insulating film in said silicon semiconductor layer.
Dependencies are inferred from the claim text.