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AssigneeKabushiki Kaisha Toshiba
InventorsYoshiaki Terashima, Hisashi Yoshino, Hiroyuki Kayano, Tadahiko Maeda
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A first electrically conductive layer whose thickness is equal to or smaller than the skin depth of the radio wave used for communication, a dielectric layer whose permittivity is changed by application of electric field, and a second electrically conductive layer whose thickness is equal to or smaller than the skin depth of the radio wave used for communication are sequentially stacked near a resonance element which is formed on the front surface of a dielectric substrate having a ground layer formed on the rear surface thereof. The effective permittivity of the dielectric layer is changed in a wide range by changing a voltage applied between the first and second electrically conductive layers to change the electric field applied to the dielectric layer. As a result, the impedance of the resonance element is changed, and when a plurality of resonance elements are arranged closely to each other to construct a filter, the coupling degree between the resonance elements is changed. Therefore, characteristics such as the resonance frequency of the resonator and the pass-band frequency of the filter are controlled by controlling a voltage to be applied.
A high-frequency device comprising:
A high-frequency device comprising:
A high-frequency device comprising:
A high-frequency device comprising:
Dependencies are inferred from the claim text.