Ionized PVD device and method of manufacturing semiconductor device

A method for manufacturing a semiconductor device, comprising the steps of:

• preparing an ionized PVD device comprising a vacuum chamber having an almost S-shaped contour shape, both ends of which define first and second openings, wherein a semiconductor substrate is provided in a first opening side, a sputtering target provided in a second opening side, plasma producing means for setting said sputtering target and said vacuum chamber to negative and positive electrodes respectively and producing a plasma between said electrodes, bias voltage applying means for applying a bias voltage to said semiconductor substrate, and magnetic field forming means provided on an outside of said vacuum chamber so as to form an almost S-shaped magnetic field in said vacuum chamber along a shape of said vacuum chamber, wherein said vacuum chamber has a set of bent portions which are bent in opposite directions to each other so that said first and second openings are not opposed to each other;
• exhausting air in said vacuum chamber to reduce a pressure of said vacuum chamber to a first pressure;
• introducing at least one gas into said vacuum chamber to raise said pressure of said vacuum chamber to a second pressure;
• applying a DC voltage across said sputtering target and said vacuum chamber as negative and positive electrodes respectively to produce a plasma of said at least one gas;
• applying a bias voltage from said bias voltage applying means to said semiconductor substrate;
• and
• forming an almost S-shaped magnetic field in said vacuum chamber by said magnetic field forming means along said shape of said vacuum chamber,
• wherein a film including a material of said sputtering target as a principal material is formed on said semiconductor substrate.