ICP reactor having a conically-shaped plasma-generating section
AssigneeMattson Technology, Inc.
InventorStephen E. Savas
Life of this patent
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AssigneeMattson Technology, Inc.
InventorStephen E. Savas
Estimating the term…
Disclosed is an inductively-coupled plasma reactor that is useful for anisotropic or isotropic etching of a substrate, or chemical vapor deposition of a material onto a substrate. The reactor has a plasma-generation chamber with a conically-shaped plasma-generating portion and coils that are arranged around the plasma-generating portion in a conical spiral. The chamber and coil may be configured to produce a highly uniform plasma potential across the entire surface of the substrate to promote uniform ion bombardment for ion enhanced processing. In addition, a conical chamber and coil configuration may be used to produce activated neutral species at varying diameters in a chamber volume for non-ion enhanced processing. Such a configuration promotes the uniform diffusion of the activated neutral species across the wafer surface.
An inductively-coupled plasma reactor for processing a substrate comprising:
A method for processing a substrate comprising the steps of:
Dependencies are inferred from the claim text.