Method of producing silicon carbide single crystal
AssigneeKabushiki Kaisha Toyota Chuo Kenkyusho
InventorsNaohiro Sugiyama, Atsuto Okamoto, Toshihiko Tani, Nobuo Kamiya
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Abstract
An easy and low-cost method of producing a large-size and high-purity silicon carbide (SiC) single crystal includes reacting silicon vapor directly with a carbon-containing compound gas under a heated atmosphere (growth space 14) to grow a silicon carbide single crystal (15) on a silicon carbide seed crystal (12), in which the silicon vapor generated from molten silicon (13) is used as a silicon vapor source, and a hydrocarbon gas (9) (e.g., propane gas) is used as the carbon-containing compound gas.
Claims9
A method of producing a silicon carbide single crystal comprising the step of:
- generating silicon vapor from molten silicon;
- and
- reacting the silicon vapor directly with a carbon-containing compound gas under a heated atmosphere to grow a silicon carbide single crystal on a silicon carbide seed crystal, wherein a hydrocarbon gas is employed as the carbon-containing compound gas.
Dependencies are inferred from the claim text.