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US 5,963,838 AGranted
Method of manufacturing a semiconductor device having wiring layers within the substrate
AssigneeKabushiki Kaisha Toshiba
InventorsTadashi Yamamoto, Souichi Sugiura
Life of this patent
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Abstract
A transistor element is formed on the surface of a silicon substrate. A tunnel is formed in the silicon substrate at a position right under the transistor element. A contact hole is formed to extend from the surface of the silicon substrate to the contact hole. Silicon oxide films are respectively formed on the inner surfaces of the tunnel and the contact hole. A wiring layer is buried in the tunnel and the contact hole. The wiring layer is connected to a diffusion layer of the transistor element.
Claims6
A method of manufacturing a semiconductor device, comprising the steps of:
- implanting impurities in a semiconductor substrate to form an impurity-implanted layer in said semiconductor substrate;
- forming a field insulating film on said semiconductor substrate to surround first and second element regions and simultaneously converting said impurity-implanted layer into a first insulating layer;
- forming a first contact hole between the first and second element regions, the first contact hole extending from a surface of said semiconductor substrate and reaching said first insulating layer;
- selectively etching said first insulating layer to form a tunnel in said semiconductor substrate;
- forming a second insulating layer on inner surfaces of said tunnel and said first contact hole;
- and
- burying a first conductive film in said tunnel and said first contact hole.
4 more elements
Dependencies are inferred from the claim text.