Method for forming a CVD film

A method for forming a CVD film, comprising the steps of:

• loading at least one object to be processed into a processing chamber and positioning the object on a support base in the processing chamber;
• after positioning the object in the processing chamber, introducing a process gas from a corresponding gas supply source via a corresponding gas introducing pipe into the processing chamber and forming a film by a chemical vapor deposition method on the object in the processing chamber;
• after forming the film on the object, unloading the object from the processing chamber;
• after unloading the object from the processing chamber, dry-cleaning an inside of the processing chamber;
• and
• after dry-cleaning the inside of the processing chamber, introducing an inert gas via a corresponding gas introducing pipe into the chamber to purge those particles deposited as a residue in the gas introducing pipe and inside of the chamber,
• further comprising the step of, after purging the particles deposited as a residue in the gas introducing pipe and in the chamber, forming a film on the support base under the same condition under which the film is formed on the object.

A method for forming a CVD film, comprising the steps of:

• loading at least one object to be processed into a processing chamber and positioning the object on a support base in the processing chamber;
• after positioning the object in the processing chamber, introducing the processing gas via a gas introducing pipe into the processing chamber from a corresponding gas supply source and forming a Ti film or TiN film by a chemical vapor deposition method on the object in the processing chamber;
• after forming such a film, unloading the object form the processing chamber;
• after unloading the object from the processing chamber, feeding a ClF.sub.3 via a gas introducing pipe into the processing chamber and dry-cleaning an inside of the processing chamber;
• after the dry-cleaning step, introducing an inert gas via the gas introducing pipe into the chamber and purging particles deposited as a residue in the gas introducing pipe and in the chamber;
• and
• after the purging step, forming a Ti film or TiN film on the support base.

A method for forming a CVD film, comprising the steps of:

• loading at least one object to be processed in a processing chamber and positioning the object on a support base in the processing chamber;
• after the positioning step, introducing a process gas via a gas introducing pipe into the processing chamber from a corresponding gas supply source and forming a Ti film or TiN film by a chemical vapor deposition method on the object in the processing chamber;
• after forming such a film, unloading the object from the processing chamber;
• after the unloading step, feeding a ClF.sub.3 gas via a corresponding gas introducing pipe into the processing chamber and dry-cleaning an inside of the chamber;
• after the dry-cleaning step, heating the inside of the chamber up to a film forming temperature;
• during heating step, introducing an inert gas via a gas introducing pipe into the chamber and purging particles deposited as a residue in the gas introducing pipe and in the chamber;
• and
• after the purging step, forming a Ti film or TiN film on the support base.

A method for forming a CVD film, comprising the steps of:

• loading at least one object to be processed into a processing chamber and positioning the object on a support base in the processing chamber;
• after positioning the object in the processing chamber, introducing a process gas from a corresponding gas supply source via a corresponding gas introducing pipe into the processing chamber and forming a film by a chemical vapor deposition method on the object in the processing chamber;
• after forming the film on the object, unloading the object from the processing chamber;
• after unloading the object from the processing chamber, dry-cleaning an inside of the processing chamber;
• and
• after dry-cleaning the inside of the processing chamber, heating the inside of the processing chamber up to a film forming temperature, wherein, in the process of heating the inside of the processing chamber, an inert gas is introduced via the gas introducing pipe into the chamber to purge the particles deposited as a residue in the gas introducing pipe and inside the chamber.