Method of making a semiconductor device with adjustable threshold voltage
AssigneeAdvanced Micro Devices, Inc.
InventorZoran Krivokapic
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Abstract
The present invention provides a method of making a semiconductor device with a channel length of approximately 0.05 microns. A method of producing a semiconductor device according to the present invention includes a control gate, a first floating gate located in proximity to the control gate, and a second floating gate located in proximity to the control gate. The present invention allows the threshold voltage of the device to be adjusted to various levels. Additionally, the device according to the present invention can be used as a very effective nonvolatile memory device.
Claims7
A method of fabricating a semiconductor device comprising:
- providing a control gate;
- providing a first floating gate located in proximity to the control gate;
- and
- providing a second floating gate located in proximity to the control gate;
- wherein the steps of providing the first and second floating gates include substeps of:
- providing a substrate;
- providing a polysilicon layer proximate to the substrate;
- etching a portion of the polysilicon layer to provide the first floating gate and the second floating gate.
Dependencies are inferred from the claim text.